title
  • image of FET, MOSFET Arrays>EPC2106ENGRT
  • image of FET, MOSFET Arrays>EPC2106ENGRT
  • Part number EPC2106ENGRT
    Product classification FET, MOSFET Arrays
    description GANFET 2N-CH 100V 1.7A DIE
    encapsulation Tape & Reel (TR)
    quantity 200
    price
    RoHS status YES
    specifications
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    TYPEDESCRIPTION
    MfrEPC
    SerieseGaN®
    PackageTape & Reel (TR)
    Product StatusDISCONTINUED
    Package / CaseDie
    Mounting TypeSurface Mount
    Configuration2 N-Channel (Half Bridge)
    Operating Temperature-40°C ~ 150°C (TJ)
    TechnologyGaNFET (Gallium Nitride)
    Drain to Source Voltage (Vdss)100V
    Current - Continuous Drain (Id) @ 25°C1.7A
    Input Capacitance (Ciss) (Max) @ Vds75pF @ 50V
    Rds On (Max) @ Id, Vgs70mOhm @ 2A, 5V
    Gate Charge (Qg) (Max) @ Vgs0.73nC @ 5V
    Vgs(th) (Max) @ Id2.5V @ 600µA
    Supplier Device PackageDie