title
  • image of FET, MOSFET Arrays>EPC2105ENGRT
  • image of FET, MOSFET Arrays>EPC2105ENGRT
  • Part number EPC2105ENGRT
    Product classification FET, MOSFET Arrays
    description GANFET 2N-CH 80V 9.5A DIE
    encapsulation Tape & Reel (TR)
    quantity 200
    price
    RoHS status YES
    specifications
    PDF(1)
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    TYPEDESCRIPTION
    MfrEPC
    SerieseGaN®
    PackageTape & Reel (TR)
    Product StatusDISCONTINUED
    Package / CaseDie
    Mounting TypeSurface Mount
    Configuration2 N-Channel (Half Bridge)
    Operating Temperature-40°C ~ 150°C (TJ)
    TechnologyGaNFET (Gallium Nitride)
    Drain to Source Voltage (Vdss)80V
    Current - Continuous Drain (Id) @ 25°C9.5A
    Input Capacitance (Ciss) (Max) @ Vds300pF @ 40V
    Rds On (Max) @ Id, Vgs14.5mOhm @ 20A, 5V
    Gate Charge (Qg) (Max) @ Vgs2.5nC @ 5V
    Vgs(th) (Max) @ Id2.5V @ 2.5mA
    Supplier Device PackageDie